GS61008P-TR

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Osa number
GS61008P-TR
Tootja
GaN Systems
Kategooriad
MOSFET
RoHS
Andmeleht
Kirjeldus
MOSFET 100V, 90A, GaN E-mode, GaNPX package, Bottom-side cooled

Tehnilised andmed

Tootja
GaN Systems
Kategooriad
MOSFET
Channel Mode
Enhancement
Id - Continuous Drain Current
90 A
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
Number of Channels
1 Channel
Packaging
Reel
Qg - Gate Charge
8 nC
Rds On - Drain-Source Resistance
9.5 mOhms
Technology
GaN
Tradename
GaNPX
Transistor Polarity
N-Channel
Vds - Drain-Source Breakdown Voltage
100 V
Vgs - Gate-Source Voltage
- 10 V, + 7 V
Vgs th - Gate-Source Threshold Voltage
1.3 V

Viimased ülevaated

it is safe and sound all, thank you seller!

Thank You all fine, packed very well

The goods are OK, thank you dealers.

Looks good

I received the product right, thank you very much 2018/12/03 ★★★★★

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