Osa number GS66506T-TR Tootja GaN Systems Kategooriad MOSFET RoHS Andmeleht GS66506T-TR Kirjeldus MOSFET 650V, 22A, GaN E-mode, GaNPX package, Top-side cooled
Tootja GaN Systems Kategooriad MOSFET Channel Mode Enhancement Id - Continuous Drain Current 22.5 A Maximum Operating Temperature + 150 C Minimum Operating Temperature - 55 C Mounting Style SMD/SMT Number of Channels 1 Channel Packaging Reel Qg - Gate Charge 4.5 nC Rds On - Drain-Source Resistance 90 mOhms Technology GaN Tradename GaNPX Transistor Polarity N-Channel Vds - Drain-Source Breakdown Voltage 650 V Vgs - Gate-Source Voltage - 10 V, + 7 V Vgs th - Gate-Source Threshold Voltage 2.6 V