- Osa number
- GS66502B-TR
- Tootja
- GaN Systems
- Kategooriad
- MOSFET
- RoHS
- Andmeleht
- Kirjeldus
- MOSFET 650V, 7.5A, GaN E-mode, GaNPX package, Bottom-side cooled
GS66502B-TR
Pildid on ainult viitamiseks
Tehnilised andmed
- Tootja
- GaN Systems
- Kategooriad
- MOSFET
- Channel Mode
- Enhancement
- Id - Continuous Drain Current
- 7.5 A
- Maximum Operating Temperature
- + 150 C
- Minimum Operating Temperature
- - 55 C
- Mounting Style
- SMD/SMT
- Number of Channels
- 1 Channel
- Packaging
- Reel
- Qg - Gate Charge
- 1.6 nC
- Rds On - Drain-Source Resistance
- 260 mOhms
- Technology
- GaN
- Tradename
- GaNPX
- Transistor Polarity
- N-Channel
- Vds - Drain-Source Breakdown Voltage
- 650 V
- Vgs - Gate-Source Voltage
- - 10 V, + 7 V
- Vgs th - Gate-Source Threshold Voltage
- 2.6 V
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Viimased ülevaated
goods very well received very good quality
Fabrice Cubaynes
Yes, they are all here. :)
sudheer kumar sirra
Hello! Order received, very happy. Thank you very much!
Flavia
Thank you for the help in the selection of the correct driver, connect, works, not heated perfectly!
สิทธิศักดิ์ วันดี
Long Service and Russia!
Alex Yu
Sul võib samuti meeldida
Inimesed vaatavad GS66502B-TR ostis
GS66502B-TR Uudised
03/14/2023
03/13/2023
03/09/2023
Seotud märksõnad GS66
- GS66502B-TR Integreeritud
- GS66502B-TR RoHS
- GS66502B-TR PDF-andmeleht
- GS66502B-TR Andmeleht
- GS66502B-TR Osa
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- GS66502B-TR Komponent
- GS66502B-TR IC-d
- GS66502B-TR Laadige alla PDF
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- GS66502B-TR Kuumad pakkumised
- GS66502B-TR Break Hind
- GS66502B-TR Tehnilised andmed
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