Osa number IGB30N60H3 Tootja Infineon Technologies Kategooriad IGBT Transistors RoHS Andmeleht IGB30N60H3 Kirjeldus IGBT Transistors 600v Hi-Speed SW IGBT
Tootja Infineon Technologies Kategooriad IGBT Transistors Collector- Emitter Voltage VCEO Max 600 V Collector-Emitter Saturation Voltage 1.95 V Configuration Single Continuous Collector Current at 25 C 60 A Maximum Gate Emitter Voltage 20 V Maximum Operating Temperature + 175 C Minimum Operating Temperature - 40 C Mounting Style SMD/SMT Package / Case TO-263-3 Packaging Cut Tape, Reel Pd - Power Dissipation 187 W Series HighSpeed 3 Technology SI