- Osa number
- IKD06N60RATMA1
- Tootja
- Infineon Technologies
- Kategooriad
- IGBT Transistors
- RoHS
- Andmeleht
- Kirjeldus
- IGBT Transistors IGBT w/ INTG DIODE 600V 12A
IKD06N60RATMA1
Pildid on ainult viitamiseks
Tehnilised andmed
- Tootja
- Infineon Technologies
- Kategooriad
- IGBT Transistors
- Collector- Emitter Voltage VCEO Max
- 600 V
- Collector-Emitter Saturation Voltage
- 1.65 V
- Configuration
- Single
- Continuous Collector Current at 25 C
- 12 A
- Maximum Gate Emitter Voltage
- 20 V
- Maximum Operating Temperature
- + 175 C
- Minimum Operating Temperature
- - 40 C
- Mounting Style
- SMD/SMT
- Package / Case
- TO-252-3
- Packaging
- Cut Tape, MouseReel, Reel
- Pd - Power Dissipation
- 100 W
- Series
- Trenchstop RC
- Technology
- SI
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Viimased ülevaated
Thank you very much! Very fast shipping. High quality. Very good seller.
Klimenko Yuriy Mihaylovich
packed pretty good, all is ok,-seller.
Julianah Yungkim
The goods are OK, thank you dealers.
CHARLES SANTOS
Thank you for the help in the selection of the correct driver, connect, works, not heated perfectly!
สิทธิศักดิ์ วันดี
I received the product right, thank you very much 2018/12/03 ★★★★★
Haur Su
Sul võib samuti meeldida
Inimesed vaatavad IKD06N60RATMA1 ostis
IKD06N60RATMA1 Uudised
03/14/2023
03/13/2023
03/09/2023
Seotud märksõnad IKD0
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