Osa number IGD01N120H2 Tootja Infineon Technologies Kategooriad IGBT Transistors RoHS Andmeleht IGD01N120H2 Kirjeldus IGBT Transistors HIGH SPEED 2 TECH 1200V 1A
Tootja Infineon Technologies Kategooriad IGBT Transistors Collector- Emitter Voltage VCEO Max 1200 V Configuration Single Maximum Gate Emitter Voltage 20 V Maximum Operating Temperature + 150 C Minimum Operating Temperature - 40 C Mounting Style SMD/SMT Package / Case TO-252-3 Packaging Cut Tape, MouseReel, Reel Series IGD01N120 Technology SI