- Osa number
- IKD10N60RATMA1
- Tootja
- Infineon Technologies
- Kategooriad
- IGBT Transistors
- RoHS
- Andmeleht
- Kirjeldus
- IGBT Transistors IGBT w/ INTG DIODE 600V 20A
IKD10N60RATMA1
Pildid on ainult viitamiseks
Tehnilised andmed
- Tootja
- Infineon Technologies
- Kategooriad
- IGBT Transistors
- Collector- Emitter Voltage VCEO Max
- 600 V
- Collector-Emitter Saturation Voltage
- 1.65 V
- Configuration
- Single
- Continuous Collector Current at 25 C
- 20 A
- Maximum Gate Emitter Voltage
- 20 V
- Maximum Operating Temperature
- + 175 C
- Minimum Operating Temperature
- - 40 C
- Mounting Style
- SMD/SMT
- Package / Case
- TO-252-3
- Packaging
- Cut Tape, MouseReel, Reel
- Pd - Power Dissipation
- 150 W
- Series
- Trenchstop RC
- Technology
- SI
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Viimased ülevaated
Thank You all fine, packed very well
Ulrich Bundke
Decent quality, not минвелл certainly, but enough decent
TEIXEIRA
receiver the timers in good condition with No bent legs due too the good package. However i haven teste Them All but they seem to have No disaffects.
Khalid Ali
to seller thank you! all like the photo. not tried operation. seller store recommend.
Lysandre FOLLET
to seller thank you! all like the photo. not tried operation. seller store recommend.
Sergey
Sul võib samuti meeldida
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Inimesed vaatavad IKD10N60RATMA1 ostis
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
IKD10N60RATMA1 Uudised
03/14/2023
03/13/2023
03/09/2023
Seotud märksõnad IKD1
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