Osa number IKB15N65EH5ATMA1 Tootja Infineon Technologies Kategooriad IGBT Transistors RoHS Andmeleht IKB15N65EH5ATMA1 Kirjeldus IGBT Transistors INDUSTRY 14
Tootja Infineon Technologies Kategooriad IGBT Transistors Collector- Emitter Voltage VCEO Max 650 V Collector-Emitter Saturation Voltage 1.65 V Configuration Single Continuous Collector Current at 25 C 30 A Maximum Gate Emitter Voltage 20 V Maximum Operating Temperature + 175 C Minimum Operating Temperature - 40 C Mounting Style SMD/SMT Package / Case TO-263-3 Packaging Cut Tape, Reel Pd - Power Dissipation 105 W Series Trenchstop IGBT5 Technology SI