- Osa number
- QH8MB5TCR
- Tootja
- ROHM Semiconductor
- Kategooriad
- MOSFET
- RoHS
- Andmeleht
- Kirjeldus
- MOSFET 40V N&P-CHANNEL
QH8MB5TCR
Pildid on ainult viitamiseks
Tehnilised andmed
- Tootja
- ROHM Semiconductor
- Kategooriad
- MOSFET
- Channel Mode
- Enhancement
- Id - Continuous Drain Current
- 4.5 A, 5 A
- Maximum Operating Temperature
- + 150 C
- Minimum Operating Temperature
- - 55 C
- Mounting Style
- SMD/SMT
- Number of Channels
- 2 Channel
- Package / Case
- TSMT-8
- Packaging
- Cut Tape, Reel
- Pd - Power Dissipation
- 1.5 W
- Qg - Gate Charge
- 17.2 nC
- Rds On - Drain-Source Resistance
- 44 mOhms, 41 mOhms
- Technology
- SI
- Transistor Polarity
- N-Channel, P-Channel
- Vds - Drain-Source Breakdown Voltage
- 40 V
- Vgs - Gate-Source Voltage
- - 20 V, + 20 V
- Vgs th - Gate-Source Threshold Voltage
- 2.5 V
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Viimased ülevaated
Properly packed, not damaged. Works well, voltage levels are stable. Recommend.
Paolo Giazzi
fast delivery, item as described, thanks!!
Sandra Scheck
Works. Find the price of this product is very good
Maxim Krasnov
High Quality driver, works excellent. It came to Moscow for 7 days.
Mark Abraham S. Goduco
Shipping a little 1 weeks, normal packing, the procedure is complete.
dennis kraft
QH8MB5TCR Uudised
03/14/2023
03/13/2023
03/09/2023
Seotud märksõnad QH8M
- QH8MB5TCR Integreeritud
- QH8MB5TCR RoHS
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- QH8MB5TCR Laadige alla PDF
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- QH8MB5TCR Kuumad pakkumised
- QH8MB5TCR Break Hind
- QH8MB5TCR Tehnilised andmed
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