XK1R9F10QB,LXGQ

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Osa number
XK1R9F10QB,LXGQ
Tootja
Toshiba
Kategooriad
MOSFET
RoHS
Andmeleht
Kirjeldus
MOSFET 375W 1MHz Automotive; AEC-Q101

Tehnilised andmed

Tootja
Toshiba
Kategooriad
MOSFET
Channel Mode
Enhancement
Id - Continuous Drain Current
160 A
Maximum Operating Temperature
+ 175 C
Minimum Operating Temperature
-
Mounting Style
SMD/SMT
Number of Channels
1 Channel
Package / Case
TO-220SM-3
Packaging
Cut Tape, Reel
Pd - Power Dissipation
375 W
Qg - Gate Charge
184 nC
Qualification
AEC-Q101
Rds On - Drain-Source Resistance
1.92 mOhms
Technology
SI
Transistor Polarity
N-Channel
Vds - Drain-Source Breakdown Voltage
100 V
Vgs - Gate-Source Voltage
- 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage
3.5 V

Viimased ülevaated

packed pretty good, all is ok,-seller.

Works. Find the price of this product is very good

Good product. Very small and well built. Ii is not produce any kind of. nterferences RFi. Quick delivery

goods delivered was отслеживался very fast (башкирию 7 days) excellent дошло seller in excellent condition all recommend!!!!

Everything is fine!

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