- Osa number
- QH8KA4TCR
- Tootja
- ROHM Semiconductor
- Kategooriad
- MOSFET
- RoHS
- Andmeleht
- Kirjeldus
- MOSFET 30V Nch+Nch Si MOSFET
QH8KA4TCR
Pildid on ainult viitamiseks
Tehnilised andmed
- Tootja
- ROHM Semiconductor
- Kategooriad
- MOSFET
- Channel Mode
- Enhancement
- Id - Continuous Drain Current
- 9 A
- Maximum Operating Temperature
- + 150 C
- Minimum Operating Temperature
- - 55 C
- Mounting Style
- SMD/SMT
- Number of Channels
- 2 Channel
- Package / Case
- TSMT-8
- Packaging
- Cut Tape, MouseReel, Reel
- Pd - Power Dissipation
- 1.5 W
- Qg - Gate Charge
- 12 nC
- Rds On - Drain-Source Resistance
- 12.5 mOhms
- Technology
- SI
- Transistor Polarity
- N-Channel
- Vds - Drain-Source Breakdown Voltage
- 30 V
- Vgs - Gate-Source Voltage
- - 12 V, + 12 V
- Vgs th - Gate-Source Threshold Voltage
- 500 mV
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Viimased ülevaated
it is safe and sound all, thank you seller!
Arturo Madril
Everything is excellent! recommend this seller!
Stoyan Chaykov
High Quality driver, works excellent. It came to Moscow for 7 days.
Mark Abraham S. Goduco
Thank you for the help in the selection of the correct driver, connect, works, not heated perfectly!
สิทธิศักดิ์ วันดี
Everything is fine!
Jane Doe
QH8KA4TCR Uudised
03/14/2023
03/13/2023
03/09/2023
Seotud märksõnad QH8K
- QH8KA4TCR Integreeritud
- QH8KA4TCR RoHS
- QH8KA4TCR PDF-andmeleht
- QH8KA4TCR Andmeleht
- QH8KA4TCR Osa
- QH8KA4TCR Osta
- QH8KA4TCR Edasimüüja
- QH8KA4TCR PDF
- QH8KA4TCR Komponent
- QH8KA4TCR IC-d
- QH8KA4TCR Laadige alla PDF
- QH8KA4TCR Lae andmeleht
- QH8KA4TCR Tarnimine
- QH8KA4TCR Tarnija
- QH8KA4TCR Hind
- QH8KA4TCR Andmeleht
- QH8KA4TCR Pilt
- QH8KA4TCR Pilt
- QH8KA4TCR Inventar
- QH8KA4TCR Varud
- QH8KA4TCR Originaal
- QH8KA4TCR Odavaim
- QH8KA4TCR Suurepärane
- QH8KA4TCR Plii tasuta
- QH8KA4TCR Spetsifikatsioon
- QH8KA4TCR Kuumad pakkumised
- QH8KA4TCR Break Hind
- QH8KA4TCR Tehnilised andmed
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